An all-GaN differential driver for a 60 V GaN-based power amplifier with 1 GHz switching frequency

摘要

An all-GaN gate-drive circuit is proposed and integrated in the same MMIC with a 60V GaN switching PA using 0.25μm depletion-mode process. The driver employs a multi-stage differential amplifier to operate a push-pull topology for switching the PA's power device with much shorter transition times than other known gate-drive topologies, and thus allows for much higher switching frequencies. Measurements show less than 122ps transition times at the PA's output and a switching frequency up to 1GHz.