Systematic comparison between a new lattice kinetic Monte Carlo method and conventional polyhedron method for stress simulation in FinFETs

摘要

In this work, the SiGe epitaxial growth in p-type bulk FinFETs is simulated by a new lattice kinetic Monte Carlo method (LKMC). Afterwards, the stress distribution in the channel is extracted and systematically compared to that extracted from the conventional polyhedron method. Except the difference in stress values, simulation results show that these two methods for stress simulation deliver similar stress distribution in both the x-direction and the z-direction of the channel. For the first time, the validity of the proposed LKMC method for stress simulation in bulk FinFETs is proven with reference to polyhedron method.