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A 10 bit 12.8 MS/s SAR analog-to-digital converter in a 250 nm SiGe BiCMOS technology

机译:采用250 nm SiGe BiCMOS技术的10位12.8 MS / s SAR SAR模数转换器

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This paper presents a 10 bit 12.8 MS/s successive approximation register (SAR) analog-to-digital converter (ADC) implemented in a 250 nm SiGe BiCMOS technology. An energy-efficient switching algorithm with top-plate sampling is applied which reduces the total input capacitance by 50%. High-impedance inputs with emitter followers and internal reference voltage generation make it suitable for applications that require precise on-chip voltage monitoring.
机译:本文介绍了采用250 nm SiGe BiCMOS技术实现的10位12.8 MS / s逐次逼近寄存器(SAR)模数转换器(ADC)。采用顶板采样的高能效开关算法,可将总输入电容降低50%。带有发射极跟随器的高阻抗输入和内部参考电压生成使其非常适合需要精确片内电压监控的应用。

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