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Ku-Band Novel Voltage Controlled Oscillator Microwave Integrated Circuit with Low Phase Noise

机译:低相位噪声的Ku波段新型压控振荡器微波集成电路

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This paper describes design and analysis of voltage controlled oscillator using NPN Silicon Germanium RF transistor operating in Ku-band frequencies. Novel topology is proposed with tunable active matching filter networks are used as resonators connected to parallel emitters. Resonator contains varactor diodes to provide voltage controlled frequency tuning. Series LC network connected at the base of device helps in increasing S11 and S >1 further leading to enough negative resistance at input and output ports. Analysis shows that it provides considerably low phase noise operation in Ku-band. This is due to the significant quality factor limits further degradation in phase noise. Interactive program was developed in Agilent's Advanced Design System (ADS) tool to choose better reflection coefficient considering trade-offs. 5.4 dBm output spectrum is achieved at 14.9GHz frequency without using buffer. VCO can be tuned in 14.85GHz to 14.95GHz frequency band using 0-22V varactor diode variable bias. Second order harmonic is -44 dBc below from the fundamental tone.
机译:本文介绍了使用在Ku频段工作的NPN硅锗RF晶体管的压控振荡器的设计和分析。提出了具有可调谐有源匹配滤波器网络的新型拓扑,该拓扑被用作连接到并联发射器的谐振器。谐振器包含变容二极管,以提供电压控制的频率调谐。连接在设备底部的串联LC网络有助于增加S11和S> 1,进一步导致输入和输出端口具有足够的负电阻。分析表明,它在Ku波段提供了相当低的相位噪声操作。这是由于重要的品质因数限制了相位噪声的进一步降低。交互式程序是在安捷伦的高级设计系统(ADS)工具中开发的,目的是在权衡取舍之后选择更好的反射系数。在不使用缓冲器的情况下,在14.9GHz频率下可获得5.4 dBm的输出频谱。可以使用0-22V变容二极管可变偏置在14.85GHz至14.95GHz频带内调谐VCO。二阶谐波比基音低-44 dBc。

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