Practical evaluations of ZCS-PWM boost DC-DC converter with active edge-resonant cell using Si-IGBT/SiC-SBD hybrid power devices

摘要

This paper presents a feasibility study of a zero current switching (ZCS)-PWM boost DC-DC converter with active edge-resonant cell (AERC) employing Si-Insulated Gate Bipolar Transistor (Si-IGBT) and SiC Shottky Barrier Diode (SiC-SBD) hybrid power devices. In the ZCS-PWM DC-DC converter newly developed for a PV power interface, a lower voltage-rating switching power device can be used for the active switches in the AERC under high-frequency switching by the effect of a recovery-less transition of the anti-parallel with assist of clamping diodes, consequently high-efficiency power conversion can be attained. The essential performance including steady-state operating characteristics of the ZCS-PWM boost DC-DC converter is demonstrated with the experimental data obtained from a 40 kHz-1.6 kW prototype.