Impact of Channel Doping and Gate Length on Small Signal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET at THz Frequency

摘要

In this paper, we investigate the impact of gate length and channel doping of GEWE-SiNW MOSFET on the small signal behavior in terms of S-parameters such as reflection and transmission coefficients at 100Hz-4THz frequency range using device simulators: ATLAS and DEVEDIT-3D. The main aim of this work is to optimize the values of gate length and channel doping that will be projected for future reference in context of high performance radio frequency applications. The Simulation results show improvement in S-parameters as we scale down the channel length and increase the channel doping. Therefore, it opens the possibility for the implementation of Silicon-On-Chip for telecommunication including both base-band and RF circuits.