The Effect of Ⅳ Characteristics on Optical Control of SDR Si IMPATT Diode

摘要

Effect of light incident on the Si SDR IMPATT diode is investigated in this paper. The authors have used an IMPATT diode which is consists of p+, n+ (contact region), n-well region and p-sub region. Since the n-well region is used to be the drift region of the structure, the light is shined on the top of the layer through tiny hole created on the SiO_2 layer. The results of the Ⅳ characteristics are compared to the dark current condition which no light will be supply on top of the structure. The result of the electric field and mobility in those two conditions are also observed in this paper.