Large signal characterization of millimeter wave devices using mixed signal active load-pull

摘要

In this paper we present the large signal measurements and model verification of SiGe BiCMOS PA cells in the 60GHz ISM band. The characterization is performed employing a custom developed mixed signal active load-pull test-bench. The measurement system is based on a WR-15 waveguide implementation providing large signal measurement capabilities in the 50–65GHz band. In this contribution we detail on the test-bench optimization for higher power levels and the measured system stability. A high performance SiGe BiCMOS technology is used as a test vehicle to demonstrate the capability of the mixed signal active load-pull, to evaluate device technology and to benchmark the large-signal prediction of transistor model in the mm-wave band.