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Residual errors in coplanar on-chip 1-port calibration caused by standard deviations

机译:由标准偏差引起的共面片上1端口校准的残留误差

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摘要

The uncertainty calculation for on-wafer 1-port S-Parameter measurements due to the uncertainty of coplanar on-chip calibration standards is presented. Analytical expressions for the sensitivities are used and applied for typical fabrication tolerances of monolithic integrated on-chip structures. The method is verified for OSM calibration by means of simulations with a commercial calibration software as well as by measurements, where test-structures with artificial errors were used. In each case the analytically calculated deviation is compared to a numerical approach and good agreement is found. All results are given for a MMIC process on GaAs, but can be adopted for other technologies.
机译:由于共面片上校准标准的不确定性,提出了晶圆上1端口S参数测量的不确定性计算。灵敏度的分析表达式用于单片集成芯片上结构的典型制造公差。通过使用商用校准软件进行的仿真以及测量(其中使用了具有人为误差的测试结构),对OSM校准方法进行了验证。在每种情况下,将分析计算出的偏差与数值方法进行比较,可以找到很好的一致性。所有结果都是针对GaAs的MMIC工艺给出的,但可以被其他技术采用。

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