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High photo-current generation in a three-dimensional silicon quantum dot superlattice fabricated by combination of bio-template and neutral beam etching for quantum dot solar cell

机译:生物模板与中性束刻蚀相结合制造的三维硅量子点超晶格中高光电流产生

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A Quantum Dot Superlattice (QDSL) offers high prospect for new generation photovoltaics. We fabricated and characterized a 3-dimensional array of Si-NDs as a QDSL with a high-aspect ratio, clear interface, and uniform size by using our advanced top-down technology consisting of bio-template and neutral beam etching processes for high-efficiency solar cells. Conductive atomic force microscopy measurements revealed that the conductivity became higher as the arrangement was changed from single Si-ND to 2D and 3D arrays with the same matrix of SiC, i.e. the coupling of wave functions was changed. Moreover, we measured the contribution of 3D Si-NDs array in producing photocurrent inside a quantum dot solar cell and also observed a higher photo absorption of sunlight by 3D Si-NDs (30%) than by a 2D array of Si-NDs (10%).
机译:量子点超晶格(QDSL)为新一代光伏产品提供了广阔的前景。我们使用先进的自上而下的技术(包括生物模板和中性束蚀刻工艺),以高纵横比,清晰的界面和均匀的尺寸,将3维Si-ND阵列作为QDSL进行了制造和表征,高效太阳能电池。导电原子力显微镜测量表明,随着排列从单个Si-ND变为具有相同SiC矩阵的2D和3D阵列,即波函数的耦合发生了改变,电导率变得更高。此外,我们测量了3D Si-NDs阵列在量子点太阳能电池内部产生光电流的贡献,并且还观察到3D Si-NDs(30%)比2D Si-NDs阵列更高的太阳光吸收率(10 %)。

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