Modeling and optimization method for thermal THz sensing with MOS transistors

摘要

In the pursuit of an uncooled THz sensor, we address the specific modeling and optimization method for micro-machined transistors for the implementation of antenna-coupled MOSFET bolometers. We discuss the degrees of freedom for maximizing the device's SNR, outlining also the trade-offs in relation to the requirements of an integrated read-out circuit. The methodology was applied to novel antenna-coupled THz sensors manufactured in a 0.18-μm SOI CMOS process. The theoretical results are supported by the measurements of these devices.