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Mapping the ultrafast charge transfer in van der Waals heterostructures

机译:在van der Waals异质结构中映射超快电荷转移

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We employ THz near-field microscopy to investigate ultrafast interlayer charge transfer in van der Waals heterostructures (HS) by tracing the resulting THz emission on the nanoscale. We further employ a novel concept of contact-free tunneling microscopy to monitor the interlayer electron-hole (e-h) pair population through its build up and decay, providing access to the ultrafast carrier dynamics with spatial resolution orders of magnitude better than the diffraction limit.
机译:我们采用THz近场显微镜通过追踪所产生的纳米级发射来研究VAN der WaaS异质结构(HS)中的超自行夹层电荷转移。我们进一步采用了一种无接触隧穿显微镜的新颖概念,通过其构建和衰减来监测层间电子孔(E-H)对群体,提供与超速率载波动态的通道,其数量级比衍射极限更好。

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