Semiconductor controlled rectifier (SCR) electrostatic discharge (ESD) protection devices in submicron CMOS technology

摘要

Multiple designs of silicon controlled rectifier (SCR) devices as major electrostatic discharge (ESD) protection circuits in 0.35 micron CMOS technology are investigated to provide better insight into their operation. They are also compared withthe conventional CMOS ESD protection circuits to investigate possible advantages in smaller silicon area, discharging paths with lower ON resistance and lower holding voltages. The I-V characteristics of designed and fabricated SCRs have been tested.Testing results allows proper tune-up of computational models such as lumped-element models and 2D device models for future use in simulation of I/O pads with ESD protection circuits. High voltage ESD testing using human body model (HBM) were alsoconducted revealing that designed structures are able to withstand the stress of 1kV.