Dependence of 1/f noise on the distance between wires: Quantum 1/f proximity effect

摘要

This paper shows that in certain conditions fundamental 1/f noise in a semiconductor sample is increased by the presence of another similar current-carrying sample located in the close vicinity. This proximity effect is described by simple formulas derived here. The paper displays the connection between coherent and conventional quantum 1/f effect in terms of the s-parameter, i.e., the ratio between magnetic and kinetic energy of the carriers. On this basis the proximity effect is introduced for the first time. It is shown to be important in the transition region between coherent and conventional quantum 1/f effect. This is just the region corresponding to nano-scale structures and devices. Therefore, the new effect will be important in nanotechnology allowing for lower 1/f noise by splitting up the nano-wire into several thinner wires, or wells, with the same total cross section.