DC and thermal noise modeling of 20 nm double-gate junctionless MOSFETs

摘要

Junctionless field-effect transistors (FETs) are now actively pursued as a future silicon transistor technology because of its good scalability, excellent electrical performance and relatively simple structure. There has been much research and technology development in JL FETs, their modeling, including some compact modeling, but relatively little work in modeling both noise and static characteristics. In this paper, we present an improved dc model that includes the field-dependent mobility and doping dependent diffusivity using a modified Einstein's relation for heavily doped semiconductors. We verify the new dc model using the data from the TCAD simulation. Finally, we demonstrate, for the first time, a new noise model and their calculated results for channel thermal noise, induced gate noise, and their correlation noise as a function of biasing conditions.