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Adding Temporal Redundancy to Delay Insensitive Codes to Mitigate Single Event Effects

机译:添加时间冗余以延迟不敏感的代码以缓解单个事件效果

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In advanced CMOS technology, Single Event Effects due to high energy particle may cause different types of electrical effects when crossing silicon: from small delay variations, to bit flips, until permanent damage. Quasi Delay Insensitive asynchronous circuits are the most immune to delay variations thanks to the use of Delay Insensitive codes, but can be very sensitive to bit flips since a Single Event Effect may corrupt the handshake protocol. This paper presents a design technique to mitigate Single Event Effect by adding temporal redundancy to Delay Insensitive codes. This multiple bit fault tolerant design technique is adaptable to any 1-of-N DI code, and is particularly well suited to asynchronous Networks-on-Chip. The proposed Temporally Redundant Delay Insensitive codes have been evaluated using a Single Event Effect digital fault characterization environment. The result shows better SEE tolerance and reduced area and performance impact.
机译:在高级CMOS技术中,当硅交叉时,由于高能量粒子引起的单一事件效应可能导致不同类型的电气效应:从小延迟变化,到钻头翻转,直到永久损坏。由于使用延迟不敏感码,准延迟不敏感异步电路是最严重的延迟变化,但由于单个事件效果可能破坏握手协议,因此可以非常敏感到位翻转。本文介绍了一种通过添加时间冗余来减轻单事件效果来减少不敏感代码的设计技术。这种多个故障容错设计技术适用于任何1-N of-of-of-of-of-of-of-of-of-inh-chip上。已经使用单个事件效果数字故障表征环境进行评估所提出的时间冗余延迟不敏感码。结果显示更好地看到容忍和降低的区域和性能影响。

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