A High Gain 450/900 MHz Dual Band Low Noise Amplifier for IoT and LTE Low-Band Receivers

摘要

This work is devoted to 450/900 MHz dual band LNA design optimization for reaching gain levels about 30...50 dB while maintaining unconditional stability and low power consumption. LNA circuit is a part of a LTE low-Band receiver integrated circuit, implemented in 180 nm CMOS technology. Main factors affecting the LNA stability and optimization technique are described.