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Amplified Spontaneous Emission in Thin Films of CsPbX3 Perovskite Nanocrystals

机译:CSPBX 3 钙钛矿纳米晶体薄膜中的自发发射

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During the last years, Metal Halide Perovskites (MHPs) have attracted special attention as an efficient conversion films for photovoltaics, or excellent gain media to construct optical sources. In spite of the fact that most of the works have been focussed on CH3NH3PbX3 (X=Cl, Br, I) polycrystalline thin films, MHP can be also synthesized as colloidal nanocrystals. In particular, caesium lead halide perovskite CsPbX3 nanocrystals (NCs) revealed extraordinary properties for optoelectronics. With a high quantum yield of emission (>90%) at room temperature and linewidths less than 100 meV, CsPbX3 NCs have demonstrated favourable characteristics for active photonics. Indeed, thin films of CsPbBr3 optically pumped by femtosecond pulses resulted in amplified spontaneous emission (ASE) with thresholds less than 10 μJ/cm2 or lasers with linewidths narrower than 0.2 nm. A further improvement of these results towards the performances demonstrated by their counterpart polycrystalline films, however, requires a reduction of different nonradiative recombination channels restricting the ASE. In this work, films of CsPbBr3 NCs are properly optimized to enhance the generation of photoluminescence (PL), and with it the optical gain. Indeed, the dependence of PL on temperature reveals the activation energies of nonradiative traps higher than 10 meV. Consequently, these films demonstrate ASE thresholds less than 5 μJ/cm2 at cryogenic temperatures under nanosecond excitation. These preliminary results pave the road towards a CsPbBr3 active photonics technology.
机译:在过去几年中,金属卤化物钙佩斯(MHPs)吸引了特别关注光伏的有效转换薄膜,或构建光源的优异增益介质。尽管大多数作品都集中在CH上 3 NH. 3 PBX. 3 (X = Cl,Br,I)多晶薄膜,MHP也可作为胶体纳米晶体合成。特别是,铯铅卤化物钙钛矿cspbx 3 纳米晶(NCS)揭示了光电子的非凡性质。在室温下发射的量高(> 90%),线宽小于100 meV,CSPBX 3 NCS已经证明了活性光子的有利特征。实际上,CSPBBR的薄膜 3 由飞秒脉冲光学泵送导致具有小于10μJ/ cm的阈值的扩增自发发射(ASE) 2 或宽度比0.2nm更窄的激光器。然而,对它们对应于多晶膜证明的性能的进一步改善,需要减少限制ASE的不同的非接种性重组通道。在这项工作中,CSPBBR的电影 3 正确优化NCS以增强光致发光(PL)的产生,并用光学增益。实际上,PL对温度的依赖性揭示了高于10meV的非散流度的激活能量。因此,这些薄膜展示了小于5μJ/ cm的ASE阈值 2 在纳秒激励下的低温温度下。这些初步结果铺设了朝着CSPBBR的道路 3 积极的光子技术。

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