New insights into redox based resistive switches

摘要

Resistive Switching Memories (RRAM) are one of the most promising candidates for future memory devices. Among other emerging RRAM concepts redox based resistive switches (ReRAM) attracted high attention to replace conventional FLASH technology. Here we show both on experimental and theoretical level new insights into nanoionic resistive switches. Of particular interest are recently discovered non equilibrium states and their potential impact on the device behavior. The strong non linear switching kinetics and redox reactions prior to the switching event in cation based memory cells will be further discussed. Moreover, the effect of quantized resistance values is shown in respect to the ultimate scalability of ReRAMs.