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Heterogeneous micro/nano-electronics: Towards the maturity learning into the zero variability era

机译:异质微/纳米电子:朝向零变化时代的成熟度学习

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Nanoelectronics will have to face major challenges in the next decades in order to proceed with increasing progress and drastically reduced to zero variability at the sub 10 nm nodes level. New progress laws combined to the scaling down of CMOS based technology will emerge to enable new paths to Functional Diversification. New materials and disruptive architectures, mixing logic and memories, Heterogeneous Integration, introducing 3D schemes at the Front End and Back End levels, will come into play to make it possible.
机译:纳米电子学必须在接下来的几十年中面临重大挑战,以便在亚10 nm节点水平上进行越来越慢地降低到零变异性。将出现新的进度法与CMOS基于CMOS的缩放缩小的法律,以使新的路径能够实现功能多样化。新材料和破坏性架构,混合逻辑和记忆,异构集成,在前端和后端水平上引入3D方案,将发挥作用。

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