Study of RFIDs with SOI technology for UWB

摘要

The objective of this work is to study the possibility of implementing SOI rectifiers for UWB RFIDs with undoped Double Gate MOSFETs (DG-MOSFETs). For that purpose we use two commercial TCAD tools, Sentaurus Device (created by Synopsys) and ADS (created by Agilent), wherein a large signal circuit model derived for the transistors is implemented with Verilog-A. Once the DG-MOSFETs output characteristics are fit, the rectifier performance at high frequencies is simulated; numerical and electrical results are successfully compared.