Atomistic process simulation for future generation nanodevices

摘要

We use predictive atomistic simulation techniques to study the front-end processing of nanometric multigate Si devices. We show that, after the amorphizing implants required for doping, annealing produces imperfect regrowth of the device body due to the presence of lateral surfaces. Based on our simulation results, we propose technological alternatives to overcome this defected recrystallization that leads to the degradation of the device performance.