Molecular implants and cold implants: Two new strategies for junction formation of future Si devices

摘要

In order to fulfill the stringent requirements for ultra-shallow junction formation and proper defect removal needed for future Si devices, molecular and cold implants have arisen as new technological strategies for dopant incorporation. In this work we have used different atomistic simulation techniques within a multiscale scheme to study the phenomena governing the damage generation in these types of implants, and to develop models that can help to optimize the fabrication of future Si devices.