Simplified Over- Temperature Protection Circuit Structure for WSN/IoT Device Power Management

摘要

This paper presents a modified structure of the over-temperature protective circuit integrated into the power management converter design for wireless sensor node devices. The design is focused on realizing a simplified circuit structure that is compatible with standard CMOS technology structure and evaluating the over-temperature threshold to assure needed accuracy. HSPICE simulation using Monte Carlo Analysis for the bandgap voltage reference is used to get a better estimation, process variation, and reliability. The target design temperature threshold is obtained at approximately 150 °C, which is the standard chip testing value at worst temperature consideration. Post-layout simulation of the proposed circuit design structure is carried out using 65nm 1P9M CMOS 1.2V/2.5V logic CMOS technology. And it is co-integrated in the power management circuit design for the system-on-chip wireless sensor node device.