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A 50 to 100GHz frequency synthesizer with 17dB side-band suppression using a single VCO core

机译:使用单个VCO内核的具有17dB边带抑制的50至100GHz频率合成器

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In this paper an octave bandwidth frequency synthesizer operating from 50 to 100 GHz is presented. The complete proposed system is fabricated using a low-cost SiGe technology with an ft/fmax of 200/250 GHz. The frequency synthesizer employs a single wideband VCO core, with a tuning range above 30%, and a single SSB-mixer with a pass-through mode of operation. This low complexity in the design is highly advantageous in mm-wave circuit design. The operation of the frequency synthesizer is completely verified by measurements, where the output power is measured to be between −5 to −12 dBm over the entire frequency range. Moreover, the frequency synthesizer's output phase noise is measured to be between −83 and −96 dBc/Hz at 1MHz offset over the complete output frequency range. The overall chip draws 181mA from a 3.3V supply, and consumes a compact chip area of 1028 µm ×; 1228 µm.
机译:本文介绍了一个工作在50至100 GHz的倍频带宽频率合成器。完整的拟议系统是使用ft / fmax为200/250 GHz的低成本SiGe技术制造的。频率合成器采用单个宽带VCO内核,其调谐范围在30%以上,并且采用单个SSB混频器,具有直通工作模式。设计的这种低复杂性在毫米波电路设计中是非常有利的。频率合成器的操作已通过测量完全验证,在整个频率范围内,输出功率测得的输出功率在-5至-12 dBm之间。此外,在整个输出频率范围内,在1MHz偏移下,频率合成器的输出相位噪声经测量在-83至-96 dBc / Hz之间。整个芯片从3.3V电源汲取181mA电流,并占用1028 µm×的紧凑芯片面积。 1228微米。

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