Electrically-driven metal-insulator transition of VO2 thin films in a nanoscale metal-oxide-metal device structure

摘要

We report the growth of vanadium dioxide (VO2) films on metal electrode with a thin SiO2 buffer and the fabrication of nanoscale metal-oxide-metal junction. The thermal-induced metal-insulator transition with a change of resistance of 2 orders of magnitude is observed and the threshold voltage is as low as 1.6V.