Turn-on Switching Transition Control using a GaN-FET based Active Gate Drive

摘要

A switched resistor based active drive scheme is delineated in this paper. The active gate drive does switching transition control (STC) of a wide bandgap (WBG) SiC MOSFET. Contrary to prevalent active gate drive schemes which are validated on a double pulse (DP) testbed, this paper synthesizes an STC scheme for a WBG PES prototype to meet a system-level goal like efficiency increment. An HF Ćuk PES operating at 50 kHz using Cree SiC MOSFET half-bridge module is fabricated for testing purpose of the STC framework. The switched resistor based STC uses HF GaN-FET based network, consisting of state-of-the-art EPC8004 GaN and LMG1020 Texas drivers. The design achieved transitions of 1 ns to create short pulse widths that can control the turn-on trajectory of the SiC device. The simple approach is realized only with the use of an industrial-scale F28379D processor.