Study on the Pspice Simulation Model of SiC MOSFET base on its Datasheet

摘要

An equivalent circuit model of SiC MOSFET based on its datasheet is presented. The model is established with a built-in level 1 MOSFET core connected with other circuit components, such as resistors and capacitors. An accurate gate-drain capacitor sub-circuit is further proposed in order to precisely predict the turn-on and turn-off transient processes of SiC MOSFET. All required parameters of SiC MOSFET Pspice simulation model can be obtained from its datasheet with parameter extraction procedure and the math fitting method introduced in this paper. Finally, the accuracy of the proposed Pspice simulation model is verified by the datasheet and experimental test results of SiC MOSFET.