Study of electrical transport properties in perovskite solar cells based on MAPI grown by physical vapor deposition

摘要

This work seeks to contribute to development of new photovoltaic materials to be used in low cost solar cells and low environmental impact. Special emphasis was placed on the study of electric transport properties in perovskite solar cells with structure FTO/ZnO/MAPI/P3HT/Au, using impedance spectroscopy technique. MAPI (CH3NH3PbI3) thin films were deposited by sequential evaporation and its thickness was varied between 300 and 600 nm. Through simulations of impedance curves, it was possible to model the electrical behavior of the cells, where simulated circuit elements values were found: $R_{0},R_{S1}, R_{S2}, c_{g}$ and $C_{S}$. From the above, the resistance at low frequencies $R_{S1}$ has higher values than the component $R_{S2}$ at high frequencies (HF) and since these have an inverse relationship with the recombination current $J_{rec,s}$ we can say that photocurrent losses by recombination are greater at HF.