PERFORMANCE COMPARISON OF HIGH EFFICIENCY PARASITIC REAR EMITTER ETCHED SOLAR CELLS WITH CONVENTIONAL SILICON SOLAR CELLS

摘要

Texturing of silicon solar cells is an important process step to improve the performance of the solar cellby increasing optical absorption and minimizing the reflectance on the front side of the cell. A conventional siliconsolar cell has both front and rear side textured in a single wet processing step. For advanced solar cell structures,which employ rear side passivation technique and local back contacts instead of a full Aluminum back surface field(Al-BSF), a planar rear surface is desired. Adding to that, for p-type cells, the parasitic rear emitter region should beetched off to passivate the rear p-type surface. In order to realize the benefits of rear emitter etched cell compared todouble side textured cell, solar cells were fabricated with single side textured wafers with parasitic rear emitterremoval. This paper compares the I-V parametric performance of baseline solar cells with two differentconfigurations- Baseline (BL)-0: Both side textured solar cell and Baseline (BL)-1: Rear side emitter etched surfacesolar cell. An improvement of up to 0.3% absolute in cell efficiency is observed with parasitic rear emitter etchedwafers compared to double side textured wafers.