Effect of Hole-Injection Layer on Top-Gate Organic Field-Effect Transistors Based on Soluble Benzothienobenzothiophene Derivatives

摘要

Effect of MoO_3 hole-injection layers on the electrical characteristics of top-gate C_8-BTBT OFETs has been investigated. The field-effect mobility of short-channel devices is improved by inserting 1-nm-thick MoO_3 layers, as a result of the decrease in contact resistance. The dependence of the electrical characteristics on MoO_3 thickness is also investigated.