A Model for Photo-Induced Threshold Voltage Shift in a Transistor Based on a BTBT Derivative

摘要

Light irradiation on a p-type transistor based on a [1]benzothieno[3,2-b]benzothiophene (BTBT) derivative resulted in a positive threshold voltage shift. The shift was slowly reversed when the device was stored under dark. This behavior is fit by a model assuming meta-stable states with two decay constants.