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Proposal of μ-Poly Si Film Structure with High Photo-Sensitive PIN-Diode for Advanced FPD

机译:具有高感光PIN二极管的μ-PoSi膜结构用于先进FPD的建议

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摘要

A new structure for PIN-diode using μ-poly Si film is proposed. After hydrogenation of μ-poly Si film formed by Blue Multi Diode Laser Annealing (BLDA), remarkable photo-conductivity appeared. By optimizing the layer structure, the photo-conductivity in red region was enhanced. The newly proposed micro-grain structure formed by BLDA is expected to be applied to AM-OLED on flexible panel.
机译:提出了一种使用μ-polySi薄膜的PIN二极管的新结构。在通过蓝色多二极管激光退火(BLDA)形成的μ-polySi膜氢化后,出现了显着的光电导性。通过优化层结构,增强了红色区域的光电导性。由BLDA形成的新提出的微晶结构有望应用于柔性面板上的AM-OLED。

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