Higher energy efficiency and higher color rendering quality are being sought by the development of GaInN/GaN light emitting diodes (LEDs) covering an increasingly wider portion of the visible spectrum. We pursue approaches to increase the InN incorporation into GaInN quantum wells while at the same time reducing defect densities and controlling or eliminating piezoelectric polarization. The result is higher quantum efficiencies at increasingly longer emission wavelengths, wavelength stable current operation and linear polarized light emission. Resulting LEDs pose an alternative to current phosphor-based white LEDs.
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