Assessment of False Identity by Variability in Operating Condition for Memristor Write Time-Based Device Fingerprints

摘要

The variability in manufacturing process and operating conditions has a significant impact on the operation of memristor devices, since it is usually implemented in nano-scale for higher density. The variability in thickness and area can be regarded as a source of variations in read and write times of memristor when using the device as a memory cell. Recently, there have been efforts to utilize this feature as a unique device ID (or so-called fingerprint) similar to its counterparts in static random-access memory (SRAM) and other non-volatile memories. In real systems, bit flips in the fingerprint caused by variability in the operating condition may increase the probability of false identity. In this study, we assess the effect of timing variability on false identity in write time-based random device fingerprint of memristor memory.