diamond; microwave power transistors; plasma CVD; radiofrequency integrated circuits; secondary ion mass spectroscopy; semiconductor doping; surface roughness; HPHT substrates; MPCVD; MRI model; RF power transistors; SIMS profiles; boron delta-doping; diamond delta doped structures; gas injector system; high pressure high temperature substrates; ion mixing combination; microwave-plasma-enhanced chemical vapor deposition; mixing roughness information; secondary ion mass spectrometry; size 7 nm; surface roughness; ultrasharp interfaces; Boron; Diamonds; Doping; Microwave theory and techniques; Nonhomogeneous media; Radio frequency; Substrates; Diamond Delta Structures;
机译:原位回蚀工艺可在掺硼的金刚石结构中获得更尖锐的顶部界面
机译:菱形掺杂和SIMS轮廓建模的清晰接口
机译:同质外延金刚石多层膜和δ掺杂结构的椭圆偏振光谱
机译:呈现超锐利界面的金刚石三角洲掺杂结构
机译:掺磷金刚石薄膜的生长和表征:掺杂,电学表征,界面的EBIC表征和某些器件应用的影响
机译:多层氮掺杂外延生长法制备的CVD单晶金刚石的界面和力学性能
机译:掺硼的金刚石结构中空穴的传输行为
机译:金刚石表面电子结构对金刚石 - 金属界面强度的影响