Effect of stone-wales defects and edge roughness on the switching and frequency performance of graphene nanoribbon-FET

摘要

The novel electronic properties of graphene nanoribbons (GNRs) including purely two-dimensional structure along with its tunable bandgap have led to intense research into possible applications of this material in nanoscale devices. However, as yet, dimensions of its possibilities in practical device levels have remained inconsistent. In this paper we propose a model for GNR-FET that is made from only Armchair GNRs. Our complete NEGF-based simulation reveals its potential for fast digital electronics with On/Off ratio up to 103, transconductance of 8.5×10 nS/nm which lead to a analog operational frequency up to 3.3THz. The effects of Stone-Wales defects and Edge Roughness in GNRs have been analysed here that shows switching and frequency performance degradation of such GNR-FETs.