首页> 外文会议>ASME international manufacturing science and engineering conference >PART DAMAGE DUE TO PROXIMITY EFFECTS DURING SUB-MICRON ADDITIVE MANUFACTURING VIA TWO-PHOTON LITHOGRAPHY
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PART DAMAGE DUE TO PROXIMITY EFFECTS DURING SUB-MICRON ADDITIVE MANUFACTURING VIA TWO-PHOTON LITHOGRAPHY

机译:通过双光子光刻在亚微米添加剂制造期间由于近距离效应而损伤

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Two-photon lithography is a direct laser write process that enables fabrication of millimeter scale 3D structures with nanoscale building blocks. In this technique, writing is achieved via a nonlinear two-photon absorption process during which two photons are near-simultaneously absorbed at high laser intensities. Due to the high laser intensities, it is essential to carefully select the incident power so that two-photon polymerization (TPP) occurs without any laser damage of the resist. Currently, the feasible range of laser power is identified by writing small test patterns at varying power levels. Herein, we demonstrate that the results of these tests cannot be generalized because the damage threshold power is dependent on the proximity of features and reduces by as much 37.5% for overlapping features. We have identified that this reduction occurs due to a combination of reduced TPP for overlapping features and increased single-photon absorption of the resin after curing. We have captured the damage arising out of this proximity effect via 3D computed tomography images of a non-homogenous part that has varying feature density. Part damage manifests in the form of internal spherical voids that arise due to boiling of the resist at high laser intensities. Herein, we have empirically quantified this proximity effect by identifying the damage threshold power at different writing speeds and feature overlap spacings. In addition, we present a first-order analytical model that captures the scaling of this proximity effect. The scaling laws and the empirical data generated here can be used to select the appropriate writing process parameters so as to correct for proximity effects and prevent part damage during sub-micron additive manufacturing of parts with closely spaced features.
机译:双光子光刻是一种直接激光写入过程,使得能够用纳米级构造块制造毫米刻度3D结构。在该技术中,通过非线性双光子吸收过程来实现写入,在此期间,在高激光强度下接近两个光子近同时吸收。由于激光强度高,必须小心地选择入射功率,使得两光子聚合(TPP)发生而没有任何激光抗蚀剂的激光损坏。目前,通过在不同功率水平下写小测试模式来识别激光功率的可行范围。在此,我们证明了这些测试的结果不能概括,因为损坏阈值功率取决于特征的接近度,并且可以减少重叠特征的37.5%。我们已经确定了由于在固化后的重叠特征和增加树脂的单光子吸收而降低TPP的组合而发生这种降低。我们已经捕获了通过具有不同特征密度的非同质部分的3D计算机断层扫描图像引起的损坏。部件损伤以内部球形空隙的形式表现为由于抗蚀剂在高激光强度下沸腾而产生的。这里,我们通过以不同的书写速度识别损坏阈值功率和特征重叠间距来统一地量化该接近效果。此外,我们提出了一阶分析模型,捕获了这种接近效果的缩放。缩放法律和这里生成的经验数据可用于选择适当的写入处理参数,以正确的邻近效应和防止亚微米添加剂制造具有紧密间隔的特征的部件的过程中部分损坏。

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