首页> 外文会议>Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials >Refractive index contributions to phase shifting in InP based 30 GHz bandwidth n-i-n Mach-Zehnder Modulators
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Refractive index contributions to phase shifting in InP based 30 GHz bandwidth n-i-n Mach-Zehnder Modulators

机译:折射率对基于InP的30 GHz带宽n-i-n马赫曾德尔调制器中相移的贡献

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We present a n-i-n based Mach - Zehnder Modulator with a 30 GHz small signal modulation bandwidth. Fabry-Perot fringes from a straight waveguide structure were investigated as a function of voltage showing a strong positive index shift, which on first sight appears to follow the absolute value of current rather than voltage. However, the refractive index increases with bias, so cannot be a carrier density effect and heating is excluded due to the high bandwidth. Refractive index shifts were measured for both TE and TM polarizations, thereby eliminating the Pockels effect as the major contributing mechanism for index change. From the above considerations of positive index shift and polarization insensitivity we deduce that the dominant mechanism is the second order Quantum Confined Stark Effect, which is quite polarization insensitive at about 100 meV below the bandgap, and that the current does not have a significant contribution to device performance.
机译:我们提出了一种基于n-i-n的Mach-Zehnder调制器,具有30 GHz的小信号调制带宽。研究了来自直波导结构的Fabry-Perot条纹作为电压的函数,显示出很强的正折射率偏移,乍一看,它似乎遵循电流的绝对值而不是电压的绝对值。但是,折射率会随着偏压的增加而增加,因此不会受到载流子密度的影响,并且由于带宽高而无法进行加热。测量了TE和TM偏振的折射率变化,从而消除了普克尔效应作为折射率变化的主要作用机理。从以上对正折射率偏移和极化不敏感的考虑,我们得出主要的机理是二阶量子约束斯塔克效应,它在带隙以下约100 meV时是极化不敏感的,并且电流对设备性能。

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