THE INFLUENCE OF CONTACT GEOMETRY AND SUB-CONTACT PASSIVATION ON THE PERFORMANCE OF SCREEN-PRINTED AL2O3 PASSIVATED SOLAR CELLS

摘要

This paper evaluates possibilities to passivate the semiconductor-metal interface present at the contactsites of large-area PERC-type solar cells to minimize recombination losses at the rear side. It focuses on the contactand BSF formation by local alloying of screen printed Al in a belt furnace process and methods to limit thedetrimental lateral Si transport away from the contact sites.The influence of different contact geometries and the resulting local BSF formation on the IV performance on celllevel is assessed. For this purpose, 125×125 mm~2 p-type Cz-Si solar cells are processed with a screen printing basedsolar cell process where Al2O3 is used as rear side dielectric and a variety of rear contacting patterns is implemented.