INVESTIGATION INTO SYNTHESIS OF SULPHUR-SELENIDES OF COPPER-ZINC-TIN AND COPPERINDIUM METALLIC PRECURSORS TO PRODUCE CUIN(SE_(1-x),S_x)_2 AND CU2ZNSN(SE_(1-x),S_x)_4

摘要

Samples of copper indium sulpho-selenide (CISe/S) and copper zinc tin sulpho-selenide (CZTSe/S)were manufactured by producing selenides via selenisation of RF sputtered metallic precursors with elementalselenium. A subsequent substitution reaction of elemental sulphur was carried out on the selenides to producesamples with S/Se between 0 and 1. XRD peaks, and therefore lattice parameters, were found to vary linearly withS/Se and band gaps were found to vary linearly between 1.1-1.56eV and 0.96-1.47eV for CISe/S and CZTSe/Srespectively. The variation in physical properties was shown to be due to the addition of sulphur by the comparison ofthe physical properties of the same samples before and after sulphidisation. The work was expanded to includeCZTSe/S with 2 different Cu:Zn:Sn ratios for exploration of the composition space and this was found to be a criticalfactor. CZTSe/S precursor composition was based on values measured in record cells.