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DEGRADATION ANALYSIS OF DIFFERENT PV MODULES AFTER PROLONGED FIELD OPERATION

机译:长时间操作后不同PV模块的降解分析

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The quality of a photovoltaic module is determined by the manufacturing process and the quality policy of themanufacturer, which is generally tested and evaluated as per international standards issued by various organizations like theIEC. These tests are commonly referred to as design qualification and type-approval tests, and are designed to assess the PVmodule’s reliability and quality on the basis of standardized criteria under conditions known to have contributed to commondegradation mechanisms. However, these tests are not sufficient for estimating the module lifetime as it has been observedthat even the qualified modules have failed or degraded more than expected, in field conditions[1]. Hence, it is critical tostudy the phenomenon of degradation in order to assess the module’s performance in the actual operating environment andfor creation of better module designs. In this paper we present the findings and our analysis of the single-crystalline andthin-film modules of five different commercial designs produced by ten manufacturers. These modules were deployed forabout 10 years in the test beds at the Solar Energy Centre(SEC), Gurgaon, India. It has been observed from experimentalresults that modules employing Cadmium Telluride (CdTe) and mono-crystalline technologies are more resilient todegradation than the amorphous-silicon modules with average degradation of 18.23% and 12.25% respectively, whereas foramorphous silicon double junction modules showed degradation of 27.24%.For the triple junction and CIS modules,observed degradation is in the range of 35% and 36% from their initial values respectively.
机译:光伏模块的质量取决于制造过程和电池的质量政策。 制造商,通常根据各个组织(如 IEC。这些测试通常称为设计鉴定和型式认可测试,旨在评估PV 在已知有助于通用的条件下,基于标准化标准的模块的可靠性和质量 退化机制。但是,这些测试不足以估计模块寿命,因为已经观察到了 在现场条件下,即使是合格的模块,其故障或降级程度也超出了预期[1]。因此, 研究退化现象,以评估模块在实际操作环境中的性能;以及 用于创建更好的模块设计。在本文中,我们介绍了单晶硅晶体的发现和分析。 十个制造商生产的五种不同商业设计的薄膜组件。这些模块已部署用于 在印度古尔冈太阳能中心(SEC)的测试台上工作约10年。从实验中已经观察到 结果表明,采用碲化镉(CdTe)和单晶技术的模块具有更高的弹性 与非晶硅组件相比,它的平均退化率分别为18.23%和12.25%,而对于非晶硅组件,平均退化率则为12.25%。 非晶硅双结模块的性能下降了27.24%。对于三结和CIS模块, 观察到的降解分别在其初始值的35%和36%范围内。

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