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Effect of calcination temperature of nanostructure Sb doped tin oxide (ATO) on electrical conductivity

机译:纳米结构掺锑氧化锡(ATO)的煅烧温度对电导率的影响

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Highly dispersed antimony doped tin oxide was prepared with SnCl4·5H2O and SbCl3 in anhydrous ethanol solution by co-precipitation method. XRD, FTIR and FESEM were employed to characterize structure and morphology of the product. Calcinations temperature plays an important role in ATO electrical conductivity. As a result, when the temperature is in the range of 500 - 700°C, the ATO exhibit a low volume resistivity, which can be attributed to the relative perfact crystallinity.
机译:采用SnCl4·5H2O和SbCl3在无水乙醇溶液中共沉淀法制备了高分散的锑掺杂氧化锡。用XRD,FTIR和FESEM表征产物的结构和形貌。煅烧温度在ATO电导率中起着重要作用。结果,当温度在500-700℃的范围内时,ATO表现出低的体积电阻率,这可以归因于相对完美的结晶度。

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