Temperature dependent electrical behavior of cellulose based transistor

摘要

Temperature dependant electrical behaviors of cellulose based flexible paper transistor were studied. Due to the covalently bonded single walled carbon nanotube into cellulose structure (SCBC), the conduction current of SCBC paper transistor shows two different slopes which is related to the measurement temperature and gate bias voltage of transistor. The electron hopping mechanism among the covalently bonded carbon nanotube in the regenerated cellulose is discussed by increasing measurement temperature of SCBC paper transistor.