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A Two-Level Caching Mechanism for Demand-Based Page-Level Address Mapping in NAND Flash Memory Storage Systems

机译:NAND闪存存储系统中基于需求的页面级地址映射的两级缓存机制

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The increasing capacity of NAND flash memory leads to large RAM footprint on address mapping in the Flash Translation Layer (FTL) design. The demand-based approach can reduce the RAM footprint, but extra address translation overhead is also introduced which may degrade the system performance. This paper proposes a two-level caching mechanism to selectively cache the on-demand page-level address mappings by jointly exploiting the temporal locality and the spatial locality of workloads. The objective is to improve the cache hit ratio so as to shorten the system response time and reduce the block erase counts for NAND flash memory storage systems. By exploring the optimized temporal-spatial cache configurations, our technique can well capture the reference locality in workloads so that the hit ratio can be improved. Experimental results show that our technique can achieve a 31.51% improvement in hit ratio, which leads to a 31.11% reduction in average system response time and a 50.83% reduction in block erase counts compared with the previous work.
机译:NAND闪存容量的增加导致闪存转换层(FTL)设计中的地址映射占用大量RAM。基于需求的方法可以减少RAM占用空间,但是还会引入额外的地址转换开销,这可能会降低系统性能。本文提出了一种二级缓存机制,可以通过联合利用工作负载的时间局部性和空间局部性来选择性地缓存按需页面级地址映射。目的是提高高速缓存命中率,以缩短系统响应时间并减少NAND闪存存储系统的块擦除次数。通过探索优化的时空缓存配​​置,我们的技术可以很好地捕获工作负载中的参考位置,从而可以提高命中率。实验结果表明,与以前的工作相比,我们的技术可以将命中率提高31.51%,从而平均系统响应时间减少31.11%,块擦除次数减少50.83%。

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