High Mobility Oxide Semiconductor TFT for Circuit Integration of AM-OLED

摘要

We have developed a high mobility and high reliability oxide semiconductor TFT which used ITZO as a channel material. The mobility was 30.9 cm2A/s and the threshold voltage shifts after 20,000 sec of BTS test was smaller than 0.1 V. In addition, we have developed a method of getting a stable enhancement type TFT, which realizes circuit integration for AM-OLED.