首页> 外文会议>PRICM 7;Pacific Rim International Conference on Advanced Materials and Processing >The Bonding Structure of the Various High Purity or Binderless Polycrystalline Cubic Boron Nitride Compacts Sintered at 5 to 7GPa and 1600 to 2000 °C
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The Bonding Structure of the Various High Purity or Binderless Polycrystalline Cubic Boron Nitride Compacts Sintered at 5 to 7GPa and 1600 to 2000 °C

机译:5至7GPa和1600至2000°C烧结的各种高纯度或无粘结剂多晶立方氮化硼压块的结合结构

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The cBN-cBN direct bonding structure of some cBN compacts made by the method of the direct conversion of the pyrolytic-BN (pBN) or wurtzite-BN (wBN) to cubic-BN at the pressure of 7GPa and temperature 2000 °C and the cBN compact made by the method of sintering the cBN powder along with polyvinylidene chloride (PVDC) at the condition of 5.5GPa and 1600 °C has been studied. The XRD, SEM, TEM analysis and the wear resistance on the ductile cast iron machining has been investigated. While the XRD analysis of the above cBN samples showed that all samples consist only of cBN, and the SEM observation showed that they all have the cBN-cBN direct bonding structure, A STEM analysis showed the existence of the impurities at the cBN crystal boundary. The starting materials and the sintering method affect the degree of these impurities.
机译:一些cBN压块的cBN-cBN直接键合结构是通过在7GPa的压力和2000°C的温度下将热解BN(pBN)或纤锌矿-BN(wBN)直接转化为立方BN的方法制成的研究了通过在5.5GPa和1600°C的条件下将cBN粉末与聚偏二氯乙烯(PVDC)烧结的方法制成的cBN压块。研究了球墨铸铁加工的XRD,SEM,TEM分析和耐磨性。上述cBN样品的XRD分析表明所有样品仅由cBN组成,而SEM观察表明它们均具有cBN-cBN直接键合结构,而STEM分析表明cBN晶体边界处存在杂质。原材料和烧结方法会影响这些杂质的程度。

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