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Future evolution of memory subsystem in mobile applications

机译:移动应用程序中存储子系统的未来发展

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As smart phones make for the focal point of today's ubiquitous computing, demands of increased memory performance for DRAM and Flash storage are surging while trying to suppress power consumption. New DRAM architectures such as Wide IO, serial I/O and combo are investigated in the industry. Fast read/write access to Flash storage is needed with the virtual memory system under multi-tasking. This paper discusses new DRAM architectures from the perspective of performance, power consumption, pin counts and others. The performance enhancement of Flash storage is discussed in optimizing the internal device for the system access pattern, and on the requirements of system software and storage interface scheme for dealing with multiple access queues.
机译:随着智能电话成为当今无处不在的计算的焦点,在试图抑制功耗的同时,对提高DRAM和Flash存储的存储性能的需求也在激增。业界正在研究新的DRAM体系结构,例如Wide IO,串行I / O和combo。在多任务处理下,虚拟内存系统需要对Flash存储具有快速的读/写访问权限。本文从性能,功耗,引脚数等角度讨论了新的DRAM架构。在针对系统访问模式优化内部设备,以及针对处理多个访问队列的系统软件和存储接口方案的要求方面,讨论了Flash存储的性能增强。

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