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A 0.25-μm Si-Ge millimeter-wave damping pulse transmitter chip with on-chip loop antenna array

机译:具有片上环形天线阵列的0.25μmSi-Ge毫米波阻尼脉冲发射器芯片

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This paper presents a 100–120-GHz pulse transmitter chip with a 54×24 on-chip loop antenna array for indoor millimeter wave (mm-wave) imaging applications. This 4-mm×4-mm transmitter for the purpose of beam-forming is designed and fabricated in a 2.5-V 0.25-μm 4-metal-layer Si-Ge Bi-CMOS process. The 23-μm×23-μm loop antenna located on the top-metal layer operates as an inductor in an mm-wave pulse generating circuit. Each of the on-chip damping pulse generators includes an R-L-C circuit, a BJT operated as a switch and a CMOS inverter chain circuit for shaping the rising edge of the input clock. Simulation results by EMDS, ADS 2009 and HSPICE show that loop antenna''s inductance and resistance at 80–120 GHz are 51 pH and 3 Ω, respectively. By using an mm-wave power meter, a 90–140-GHz standard horn antenna and a Schottky diode detector, we demonstrate the ability of an integrated mm-wave pulse generator for the purpose of beam-forming.
机译:本文介绍了一种100–120 GHz脉冲发送器芯片,该芯片具有一个54×24的片上环形天线阵列,适用于室内毫米波(mm-wave)成像应用。这款用于波束形成的4毫米×4毫米发射器是在2.5V 0.25μm4金属层Si-Ge Bi-CMOS工艺中设计和制造的。位于顶层金属层上的23μm×23μm环形天线用作毫米波脉冲发生电路中的电感器。每个片上阻尼脉冲发生器包括R-L-C电路,用作开关的BJT和用于对输入时钟的上升沿进行整形的CMOS反相器链电路。 EMDS,ADS 2009和HSPICE的仿真结果表明,环形天线在80–120 GHz时的电感和电阻分别为51 pH和3Ω。通过使用毫米波功率计,90–140 GHz标准喇叭天线和肖特基二极管检测器,我们证明了集成毫米波脉冲发生器用于波束形成的能力。

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