首页> 外文会议>Proceedings of the 16th ACM/IEEE International Symposium on Low-Power Electronics and Design >Rank-aware cache replacement and write buffering to improve DRAM energy efficiency
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Rank-aware cache replacement and write buffering to improve DRAM energy efficiency

机译:支持等级的缓存替换和写缓冲,以提高DRAM的能效

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DRAM power and energy efficiency considerations are becoming increasingly important for low-power and mobile systems. Using lower power modes provided by commodity DRAM chips reduces power consumption but comes at a performance penalty to return to full power for servicing requests. We propose a novel cache replacement policy and write buffer that prevents cache blocks going to certain DRAM chips from being replaced, resulting in less requests going to these chips, and allowing them to remain idle for longer periods of time. Our proposed modifications improve DRAM energy efficiency by 10% on average (up to 30%) compared to a base case that utilizes low power modes, and by 76% compared to a base case that does not utilize power saving modes.
机译:对于低功耗和移动系统,DRAM功耗和能效方面的考虑变得越来越重要。使用商品DRAM芯片提供的低功耗模式可以降低功耗,但会因性能下降而返回全功率以满足服务请求。我们提出了一种新颖的缓存替换策略和写缓冲区,该策略可以防止替换进入某些DRAM芯片的缓存块,从而减少了对这些芯片的请求,并使它们可以保持更长的空闲时间。与采用低功耗模式的基本情况相比,我们提出的改进方案使DRAM的能源效率平均提高了10%(最高30%),与不采用节能模式的基本情况相比,提高了76%。

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